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For the Inventor, By the Inventor

Seoul, South Korea

Seung-Jin Yang

USPTO Granted Patents = 12 

Average Co-Inventor Count = 3.1

ph-index = 4

Forward Citations = 220(Granted Patents)


Company Filing History:

goldMedal12 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2008-2014

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12 patents (USPTO):Explore Patents
1. 8634249 - Programming method for non-volatile memory device (2014-01-21),
2. 8507997 - Mask read-only memory having a fake select transistor (2013-08-13),
3. 8450809 - Semiconductor device for applying common source lines with individual bias voltages (2013-05-28),
4. 8320184 - Method of programming nonvolatile semiconductor memory device (2012-11-27),
5. 7973314 - Semiconductor device and method of manufacturing the same (2011-07-05),
6. 7855410 - Semiconductor memory devices having a floating gate with a projecting portion and methods of forming semiconductor memory devices having a floating gate with a projecting portion (2010-12-21),
7. 7820516 - Methods of manufacturing non-volatile memory devices having a vertical channel (2010-10-26),
8. 7642593 - Nonvolatile memory device and method of fabricating the same (2010-01-05),
9. 7531410 - Semiconductor flash memory device and method of fabricating the same (2009-05-12),
10. 7514739 - Nonvolatile semiconductor device and method of fabricating the same (2009-04-07),
11. 7495281 - Non-volatile memory device and methods of forming and operating the same (2009-02-24),
12. 7411243 - Nonvolatile semiconductor device and method of fabricating the same (2008-08-12),

Title: Seung-Jin Yang: Innovator in Non-Volatile Memory Technology

Introduction

Seung-Jin Yang is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of non-volatile memory devices, holding a total of 12 patents. His work has been instrumental in advancing memory technology, particularly in programming methods and memory architecture.

Latest Patents

Among his latest patents is a programming method for non-volatile memory devices. This innovative method involves applying positive and negative pulses simultaneously to a memory cell array, allowing for efficient programming of memory cells. Another notable patent is for a mask read-only memory that features a unique architecture. This design includes parallel doping lines of a second conductivity type within a substrate of a first conductivity type, along with a series of insulation films and conductive pads that define memory cells.

Career Highlights

Seung-Jin Yang is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of memory technology. His work has not only contributed to the company's advancements but has also set new standards in the industry.

Collaborations

Throughout his career, Yang has collaborated with talented individuals such as Jeong-Uk Han and Yong-Tae Kim. These collaborations have fostered innovation and have led to the development of groundbreaking technologies in the field of memory devices.

Conclusion

Seung-Jin Yang's contributions to non-volatile memory technology are noteworthy and impactful. His innovative patents and collaborations highlight his role as a leading inventor in the industry. His work continues to influence the future of memory technology.

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