The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2009

Filed:

Dec. 29, 2006
Applicants:

Yong-suk Choi, Hwaseong-si, KR;

Jeong-uk Han, Suwon-si, KR;

Hee-seog Jeon, Suwon-si, KR;

Seung-jin Yang, Seoul, KR;

Hyok-ki Kwon, Yongin-si, KR;

Inventors:

Yong-Suk Choi, Hwaseong-si, KR;

Jeong-Uk Han, Suwon-si, KR;

Hee-Seog Jeon, Suwon-si, KR;

Seung-Jin Yang, Seoul, KR;

Hyok-Ki Kwon, Yongin-si, KR;

Assignee:

Samsung Electronic Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor flash memory device. The flash memory device includes a floating gate electrode disposed in a recess having slanted sides in a semiconductor substrate. A gate insulation film is interposed between the floating gate electrode and the semiconductor substrate. A control gate electrode is disposed over the floating gate electrode. The floating gate electrode includes projections adjacent to the slanted sides of the recess.


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