The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 21, 2010

Filed:

Jul. 07, 2008
Applicants:

Seung-jin Yang, Seoul, KR;

Jeong-uk Han, Gyeonggi-do, KR;

Yong-suk Choi, Gyeonggi-do, KR;

Hyok-ki Kwon, Gyeonggi-do, KR;

Bae-seong Kwon, Gyeonggi-do, KR;

Inventors:

Seung-Jin Yang, Seoul, KR;

Jeong-Uk Han, Gyeonggi-do, KR;

Yong-Suk Choi, Gyeonggi-do, KR;

Hyok-Ki Kwon, Gyeonggi-do, KR;

Bae-Seong Kwon, Gyeonggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, a semiconductor memory device can be generally characterized as including a gate insulating layer on a semiconductor substrate, a floating gate on the gate insulating layer and a word line disposed on one side of the floating gate. A first side of the floating gate facing the word line may include a projecting portion projecting toward the word line. A tip of the projecting portion may include a corner that extends substantially perpendicularly with respect to a top surface of the semiconductor substrate.


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