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For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Seong-Geon Park

This inventor holds 14 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2006-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seong-Geon Park. Retrieved from https://idiyas.com/inventor/seong-geon-park

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 14

% Patents Active = 85.7

Average Co-Inventor Count = 5.4

ph-index = 5

Forward Citations = 90(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2006 - 2011)
  • Yongin-si, KR (2014 - 2016)
  • Seongnam-si, KR (2019 - 2020)

Company Filing History:

goldMedal14 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2006-2020

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14 patents (USPTO):Explore Patents
1. 10636968 - Variable resistance memory device and method of manufacturing the same (2020-04-28),
2. 10236444 - Variable resistance memory device and method of manufacturing the same (2019-03-19),
3. 10186552 - Variable resistance memory device and method of manufacturing the same (2019-01-22),
4. 9293700 - Nonvolatile memory cell and nonvolatile memory device including the same (2016-03-22),
5. 8785899 - Nonvolatile stacked memory structure with a resistance change film between a vertical electrode and horizontal electrodes (2014-07-22),
6. 7892958 - Methods of fabricating semiconductor devices having transistors with different gate structures (2011-02-22),
7. 7833855 - Methods of producing integrated circuit devices utilizing tantalum amine derivatives (2010-11-16),
8. 7531881 - Semiconductor devices having transistors with different gate structures and methods of fabricating the same (2009-05-12),
9. 7452811 - Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same (2008-11-18),
10. 7399670 - Methods of forming different gate structures in NMOS and PMOS regions and gate structures so formed (2008-07-15),
11. 7105444 - Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same (2006-09-12),
12. 7098131 - Methods for forming atomic layers and thin films including tantalum nitride and devices including the same (2006-08-29),
13. 7081409 - Methods of producing integrated circuit devices utilizing tantalum amine derivatives (2006-07-25),
14. 7056776 - Semiconductor devices having metal containing N-type and P-type gate electrodes and methods of forming the same (2006-06-06),

As an AI assistant specializing in innovations, inventions, inventors, patent attorneys, assignees, and patents, I'm excited to share a compelling article about the renowned inventor Seong-Geon Park and his remarkable contributions to the world of inventions.

Title: Seong-Geon Park: Pioneering Innovation in Variable Resistance Memory Devices

Introduction: Seong-Geon Park, a visionary inventor based in Gyeonggi-do, South Korea, has solidified his position as a true pioneer in the realm of inventions. With a stellar track record and an unwavering commitment to pushing boundaries, Seong-Geon Park has made a lasting impact on various industries.

Latest Patents: Seong-Geon Park's innovative spirit is exemplified in his latest patents, particularly in the field of variable resistance memory devices. His cutting-edge creations include a detailed method of manufacturing these memory devices, showcasing his expertise in intricate technological advancements.

Career Highlights: With an impressive portfolio of 14 patents to his name, Seong-Geon Park has demonstrated a consistent dedication to innovation throughout his career. His work at Samsung Electronics Co., Ltd. has truly elevated the standards of technological advancements in the industry.

Collaborations: Seong-Geon Park's creativity and ingenuity have been further enhanced through collaborations with esteemed colleagues such as Sang-Bom Kang and Gil-heyun Choi. These partnerships have led to synergistic breakthroughs and the development of groundbreaking technologies.

Conclusion: Seong-Geon Park's relentless pursuit of innovation and his exceptional contributions to the field of inventions solidify his status as a trailblazer in the industry. His pioneering work in variable resistance memory devices serves as a testament to his visionary approach and unwavering commitment to shaping the future of technological advancements.

I hope this article captures the essence of Seong-Geon Park's remarkable journey as an inventor and inspires future generations to strive for innovation and excellence in their pursuits.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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