The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
May. 28, 2004
Sang-bom Kang, Seoul, KR;
Byung-hee Kim, Seoul, KR;
Kyung-in Choi, Seoul, KR;
Gil-heyun Choi, Gyeonggi-do, KR;
You-kyoung Lee, Chungchoungbuk-do, KR;
Seong-geon Park, Gyeonggi-do, KR;
Sang-Bom Kang, Seoul, KR;
Byung-Hee Kim, Seoul, KR;
Kyung-In Choi, Seoul, KR;
Gil-Heyun Choi, Gyeonggi-do, KR;
You-Kyoung Lee, Chungchoungbuk-do, KR;
Seong-Geon Park, Gyeonggi-do, KR;
Abstract
Atomic layers can be formed by introducing a tantalum amine derivative reactant onto a substrate, wherein the tantalum amine derivative has a formula: Ta(NR)(NRR), wherein R, Rand Rare each independently H or a C–Calkyl functional group, chemisorbing a portion of the reactant on the substrate, removing non-chemisorbed reactant from the substrate and introducing a reacting gas onto the substrate to form a solid material on the substrate. Thin films comprising tantalum nitride (TaN) are also provided.