The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Jun. 26, 2006
Sang-bom Kang, Seoul, KR;
Kyung-in Choi, Seoul, KR;
You-kyoung Lee, Chungchoungbuk-do, KR;
Seong-geon Park, Gyeonggi-do, KR;
Gil-heyun Choi, Gyeonggi-do, KR;
Jong-myeong Lee, Gyeonggi-do, KR;
Sang-woo Lee, Seoul, KR;
Sang-Bom Kang, Seoul, KR;
Kyung-In Choi, Seoul, KR;
You-Kyoung Lee, Chungchoungbuk-do, KR;
Seong-Geon Park, Gyeonggi-do, KR;
Gil-Heyun Choi, Gyeonggi-do, KR;
Jong-Myeong Lee, Gyeonggi-do, KR;
Sang-Woo Lee, Seoul, KR;
Abstract
In a method for forming a field effect transistor, a metal nitride layer is formed on a gate electrode insulating layer. Tantalum amine derivatives represented by the chemical formula Ta(NR)(NRR), in which R, Rand Rrepresent H or a C-Calkyl group, may be used to form the metal nitride layer. Nitrogen may then be implanted into the metal nitride layer to increase the nitrogen content of the layer.