The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2011

Filed:

Apr. 13, 2009
Applicants:

Hye-lan Lee, Gyeonggi-do, KR;

Yu-gyun Shin, Gyeonggi-do, KR;

Sang-bom Kang, Seoul, KR;

Hag-ju Cho, Gyeonggi-do, KR;

Seong-geon Park, Gyeonggi-do, KR;

Taek-soo Jeon, Gyeonggi-do, KR;

Inventors:

Hye-Lan Lee, Gyeonggi-do, KR;

Yu-Gyun Shin, Gyeonggi-do, KR;

Sang-Bom Kang, Seoul, KR;

Hag-Ju Cho, Gyeonggi-do, KR;

Seong-Geon Park, Gyeonggi-do, KR;

Taek-Soo Jeon, Gyeonggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device has two transistors of different structure from each other. One of transistors is P-type and the other is N-type. One of the transistors includes a gate structure in which a polysilicon layer contacts a gate insulation film while the other transistor includes a gate structure in which a metal layer contacts a gate insulation film.


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