The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2006
Filed:
Jun. 25, 2004
Sang-bom Kang, Seoul, KR;
Jong-myeong Lee, Gyeonggi-do, KR;
Kyung-in Choi, Seoul, KR;
Gil-heyun Choi, Gyeonggi-do, KR;
You-kyoung Lee, Chungchoungbuk-do, KR;
Seong-geon Park, Gyeonggi-do, KR;
Sang-woo Lee, Seoul, KR;
Sang-Bom Kang, Seoul, KR;
Jong-Myeong Lee, Gyeonggi-do, KR;
Kyung-In Choi, Seoul, KR;
Gil-Heyun Choi, Gyeonggi-do, KR;
You-Kyoung Lee, Chungchoungbuk-do, KR;
Seong-Geon Park, Gyeonggi-do, KR;
Sang-Woo Lee, Seoul, KR;
Abstract
In a method for forming a gate electrode, a dielectric layer having a high dielectric constant is formed on a substrate. Tantalum amine derivatives represented by a chemical formula Ta(NR)(NRR)in which R, Rand Rrepresent H or C–Calkyl group are introduced onto the dielectric layer to form a tantalum nitride layer. A capacitor metal layer or a gate metal layer is formed on the tantalum nitride layer. The capacitor metal layer or the gate metal layer and the tantalum nitride layer are patterned to form a capacitor electrode or a gate electrode. The tantalum amine derivatives are used in forming a dual gate electrode.