The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2016

Filed:

Jun. 11, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Hyun-Su Ju, Hwaseong-si, KR;

Min-Kyu Yang, Hwaseong-si, KR;

Eun-Mi Kim, Hwaseong-si, KR;

Seong-Geon Park, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01L 27/249 (2013.01); H01L 45/08 (2013.01); H01L 45/1226 (2013.01); H01L 45/146 (2013.01);
Abstract

According to example embodiments, a nonvolatile memory cell includes a first electrode and a second electrode, a resistance change film between the first electrode and the second electrode, and a first barrier film contacting the second electrode. The resist change film contains oxygen ions and contacts the first electrode. The first barrier film is configured to reduce (and/or block) the outflow of the oxygen ions from the resistance change film.


Find Patent Forward Citations

Ju, Hyun-Su. (2016). Nonvolatile memory cell and nonvolatile memory device including the same (U.S. Patent No. 9293700). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9293700

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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