Hwaseong-si, South Korea

Eun-Mi Kim


Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 7(Granted Patents)


Location History:

  • Yongin-si, KR (2012 - 2013)
  • Hwaseong-Si, KR (2012 - 2016)

Company Filing History:


Years Active: 2012-2016

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5 patents (USPTO):Explore Patents

Title: Innovations of Eun-Mi Kim

Introduction

Eun-Mi Kim is a prominent inventor based in Hwaseong-si, South Korea. She has made significant contributions to the field of nonvolatile memory technology, holding a total of five patents. Her work has been instrumental in advancing memory cell designs that enhance data storage capabilities.

Latest Patents

One of her latest patents is focused on a nonvolatile memory cell and nonvolatile memory device that includes a first electrode, a second electrode, and a resistance change film situated between them. This innovative design incorporates a first barrier film that effectively reduces the outflow of oxygen ions from the resistance change film, thereby improving the memory cell's performance. Another notable patent involves a nonvolatile stacked memory structure that features a resistance change film positioned between a vertical electrode and horizontal electrodes, further showcasing her expertise in memory technology.

Career Highlights

Eun-Mi Kim has worked with leading companies in the technology sector, including Samsung Electronics and Canon Anelva Corporation. Her experience in these organizations has allowed her to collaborate with some of the brightest minds in the industry, contributing to her success as an inventor.

Collaborations

Eun-Mi has collaborated with talented coworkers such as Hyun-Su Ju and Min-kyu Yang, enhancing her projects with diverse perspectives and expertise.

Conclusion

Eun-Mi Kim's innovative work in nonvolatile memory technology has established her as a key figure in the field. Her patents reflect her commitment to advancing memory cell designs, and her collaborations with industry leaders further underscore her impact on technology.

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