The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Apr. 19, 2012
Takashi Nakagawa, Tokyo, JP;
Eun-mi Kim, Hwaseong-Si, KR;
Yuichi Otani, Tokyo, JP;
Naomu Kitano, Tokyo, JP;
Takashi Nakagawa, Tokyo, JP;
Eun-mi Kim, Hwaseong-Si, KR;
Yuichi Otani, Tokyo, JP;
Naomu Kitano, Tokyo, JP;
Canon Anelva Corporation, Kawasaki-shi, JP;
Abstract
In a variable resistance nonvolatile storage element, an electrode suitable for a variable resistance operation and formed of a metallic nitride layer containing Ti and N is provided. In a nonvolatile storage device including: a first electrode; a second electrode; and a variable resistance layer which is sandwiched between the first electrode and the second electrode and in which a resistance value changes to two different resistance states, at least one of the first electrode and the second electrode is an electrode including a metallic nitride layer containing at least Ti and N, and a mole ratio (N/Ti ratio) between Ti and N in at least a part of the metallic nitride layer, the part being in contact with the variable resistance layer is 1.15 or more and a film density is 4.7 g/cc or more.