The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Oct. 26, 2011
Jong-yun Myung, Seoul, KR;
Hyuek-jae Lee, Suwon-si, KR;
Ji-sun Hong, Asan-si, KR;
Tae-je Cho, Hwaseong-si, KR;
Un-byoung Kang, Hwaseong-si, KR;
Hyung-sun Jang, Anyang-si, KR;
Eun-mi Kim, Yongin-si, KR;
Jung-hwan Kim, Bucheon-si, KR;
Tae-hong Min, Gumi-si, KR;
Jong-Yun Myung, Seoul, KR;
Hyuek-Jae Lee, Suwon-si, KR;
Ji-Sun Hong, Asan-si, KR;
Tae-Je Cho, Hwaseong-si, KR;
Un-Byoung Kang, Hwaseong-si, KR;
Hyung-Sun Jang, Anyang-si, KR;
Eun-Mi Kim, Yongin-si, KR;
Jung-Hwan Kim, Bucheon-si, KR;
Tae-Hong Min, Gumi-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A method of forming a semiconductor device includes preparing a semiconductor substrate having a plurality of chips formed thereon and a scribe lane disposed between the chips, simultaneously forming a groove having a first depth in the scribe lane, and a through hole penetrating the chips and having a second depth. The chips are separated along the groove. The first depth is smaller than the second depth.