The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2019
Filed:
Feb. 14, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Hideki Horii, Seoul, KR;
Seong-Geon Park, Seongnam-si, KR;
Dong-Ho Ahn, Hwaseong-si, KR;
Jung-Moo Lee, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A variable resistance memory device includes first conductive lines positioned above a substrate. Each of the first conductive lines extends in a first direction and a second direction. Second conductive lines extend in the first direction and the second direction. The second conductive lines are positioned above the first conductive lines. A memory is positioned between the first and second conductive lines. The memory unit overlaps the first and second conductive lines in a third direction. The memory unit includes a first electrode, a variable resistance pattern positioned on the first electrode, and a second electrode positioned on the variable resistance pattern. A selection pattern is positioned on each memory unit. A third electrode is positioned above the selection pattern. The third electrode is in direct contact with a lower surface of each of the second conductive lines.