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For the Inventor, By the Inventor

Tokyo, Japan

Seiichi Mori

USPTO Granted Patents = 81 

Average Co-Inventor Count = 1.8

ph-index = 18

Forward Citations = 1,159(Granted Patents)


Inventors with similar research interests:


Location History:

  • Fujisawa, JP (1990 - 1993)
  • Ootaku, JP (1997)
  • Ohta-ku, JP (2006)
  • Tokyo-To, JP (2004 - 2009)
  • Ota-Ku, JP (2006 - 2010)
  • Tokyo, JP (1986 - 2015)

Company Filing History:

goldMedal75 out of 52,711 
 
Kabushiki Kaisha Toshiba
 patents
silverMedal4 out of 3,132 
 
Asahi Kogaku Kogyo Kabushiki Kaisha
 patents
bronzeMedal1 out of 176 
 
Asahi Kogaku Kogyo K.k.
 patents
4. 1 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 1986-2015

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Areas of Expertise:
Nonvolatile Semiconductor Memory
Semiconductor Memory Device
Element Isolating Region
Trench Type Isolation
Floating Gate Structure
Charge Storage Electrode
MISFETs
High-Speed Data Programmable Memory
Memory Cell Array
Threshold Voltage Control
Fabrication Method
81 patents (USPTO):Explore Patents
1. 9059300 - Nonvolatile semiconductor memory device having element isolating region of trench type (2015-06-16),
2. 8421143 - Nonvolatile semiconductor memory device having element isolating region of trench type (2013-04-16),
3. 8405139 - Nonvolatile semiconductor memory device having element isolating region of trench type (2013-03-26),
4. 7939406 - Nonvolatile semiconductor memory device having element isolating region of trench type (2011-05-10),
5. 7795667 - Semiconductor memory preventing an electric short circuit between a word line and a semiconductor substrate, and manufacturing method for the semiconductor memory (2010-09-14),
6. 7785954 - Semiconductor memory integrated circuit and its manufacturing method (2010-08-31),
7. 7573092 - Nonvolatile semiconductor memory device having element isolating region of trench type (2009-08-11),
8. 7557401 - Semiconductor device and method of manufacturing the same (2009-07-07),
9. 7538380 - Nonvolatile semiconductor memory device having element isolating region of trench type (2009-05-26),
10. 7498630 - Nonvolatile semiconductor memory (2009-03-03),
11. 7479430 - Non-volatile semiconductor memory device (2009-01-20),
12. 7449745 - Nonvolatile semiconductor memory device having element isolating region of trench type (2008-11-11),
13. 7420259 - Semiconductor device having two-layered charge storage electrode (2008-09-02),
14. 7382016 - Semiconductor device and method of manufacturing the same (2008-06-03),
15. 7371654 - Manufacturing method of semiconductor device with filling insulating film into trench (2008-05-13),

Title: Seiichi Mori: Pioneering Inventor from Tokyo

Introduction: Seiichi Mori is a renowned inventor hailing from Tokyo, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Seiichi Mori holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his continuous dedication to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Seiichi Mori has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant technological breakthroughs.

Collaborations: Throughout his career, Seiichi Mori has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge sharing.

Conclusion: Seiichi Mori's passion for innovation and his relentless pursuit of technological excellence have solidified his reputation as a pioneering inventor not only in Tokyo but on a global scale.

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