The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2009
Filed:
Apr. 18, 2006
Keisuke Yonehama, Mie, JP;
Seiichi Mori, Tokyo, JP;
Eiji Sakagami, Kanagawa, JP;
Masahisa Sonoda, Mie, JP;
Keisuke Yonehama, Mie, JP;
Seiichi Mori, Tokyo, JP;
Eiji Sakagami, Kanagawa, JP;
Masahisa Sonoda, Mie, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes an element isolation insulating film adjacent to an active area, a gate insulating film formed on a semiconductor substrate in the active area, paired gate electrodes located on the gate insulating film, a contact plug located on the active area between the gate electrodes, a pair of first upper lines located on the gate electrodes, a second upper line located on the gate electrodes, and a stopper film above upper surfaces of the gate electrodes and side surfaces of the gate electrodes. The element isolation insulating film has a first height of an upper surface thereof with reference to an upper surface of the semiconductor substrate and a second height of another upper surface thereof with reference to another upper surface of the semiconductor substrate. The first height is smaller than the second height.