The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Apr. 03, 2006
Atsuhiro Sato, Kanagawa-ken, JP;
Masayuki Ichige, Kanagawa-ken, JP;
Seiichi Mori, Tokyo, JP;
Yuji Takeuchi, Kanagawa, JP;
Hiroaki Hazama, Tokyo, JP;
Yukio Nishiyama, Kanagawa, JP;
Hirotaka Ogihara, Saitama-ken, JP;
Naruhiko Kaji, Kanagawa-ken, JP;
Atsuhiro Sato, Kanagawa-ken, JP;
Masayuki Ichige, Kanagawa-ken, JP;
Seiichi Mori, Tokyo, JP;
Yuji Takeuchi, Kanagawa, JP;
Hiroaki Hazama, Tokyo, JP;
Yukio Nishiyama, Kanagawa, JP;
Hirotaka Ogihara, Saitama-ken, JP;
Naruhiko Kaji, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
Forming of a first silicon oxide film is started on an internal surface of a trench formed on a surface or upwardly of a semiconductor substrate according to an HDP technique. Then, deposition of the first silicon oxide film stops before an opening of the trench closes. Further, the first silicon oxide film deposited in the vicinity of an opening is etched, and a second silicon oxide film is formed on the first silicon oxide film deposited on the bottom of the trench according to the HDP technique. In this manner, the first and second silicon oxide films can be laminated on the bottom of the trench.