Yukio Nishiyama

Title: Innovations of Yukio Nishiyama

Introduction

Yukio Nishiyama is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. His work focuses on methods for forming insulating films and manufacturing semiconductor devices.

Latest Patents

Nishiyama's latest patents include a method of forming an insulating film and a method of manufacturing a semiconductor device, along with their controlling computer program. In his innovative process, a semiconductor substrate with a groove is placed in a plasma generating reaction chamber. Silicon, oxygen, and hydrogen-containing gases are introduced as process gases. The first gas-flow ratio is defined by the ratio of the hydrogen-containing gas flow to the total gas flow of the silicon and oxygen gases. The second gas-flow ratio is determined by the flow of the oxygen-containing gas to that of the silicon-containing gas. These ratios establish a linear function for a critical condition, allowing for the formation of an insulating film buried in the groove through alternating cluster formation and suppression conditions.

Career Highlights

Throughout his career, Yukio Nishiyama has worked with notable companies, including Kabushiki Kaisha Toshiba and Tohsiba. His expertise in semiconductor technology has led to advancements in manufacturing methods, particularly in the deposition and etching processes of silicon oxide films.

Collaborations

Nishiyama has collaborated with several professionals in his field, including Rempei Nakata and Naruhiko Kaji. Their combined efforts have contributed to the development of innovative semiconductor technologies.

Conclusion

Yukio Nishiyama's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His innovative methods continue to influence the field and pave the way for future advancements.