The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 1997
Filed:
Mar. 28, 1995
Yukio Nishiyama, Yokohama, JP;
Rempei Nakata, Kawasaki, JP;
Nobuo Hayasaka, Yokosuka, JP;
Haruo Okano, Tokyo, JP;
Riichirou Aoki, Tokyo, JP;
Takahito Nagamatsu, Kawasaki, JP;
Akemi Satoh, Sagamihara, JP;
Masao Toyosaki, Kawasaki, JP;
Hitoshi Ito, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below: