The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2005
Filed:
Sep. 24, 2003
Kei Watanabe, Oita, JP;
Yukio Nishiyama, Yokohama, JP;
Kei Watanabe, Oita, JP;
Yukio Nishiyama, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device comprises a semiconductor substrate, an interlayer insulating layer formed above the semiconductor substrate, a first metal interconnection embedded in the interlayer insulating layer with a surface thereof exposed to the same plane as a surface of the interlayer insulating layer, a diffusion preventive layer formed on at least the first metal interconnection to prevent diffusion of a metal included in the first metal interconnection, a nitrogen-doped silicon oxide layer formed on the diffusion preventive layer, a fluorine-doped silicon oxide layer formed on the nitrogen-doped silicon oxide layer, and a second metal interconnection embedded in the fluorine-doped silicon oxide layer with a surface thereof exposed to the same plane as a surface of the fluorine-doped silicon oxide layer, and electrically connected to the first metal interconnection.