Kabushiki Kaisha Toshiba

Showa Denko K.k.

Kabushiki Kaihsa Toshiba

Kabushiki Kaisha Tohsiba

Yukio Nishiyama

Rempei Nakata

Naruhiko Kaji

Hirotaka Ogihara

Kei Watanabe

Riichirou Aoki

Haruo Okano

Yuji Takeuchi

Seiichi Mori

Nobuo Hayasaka

Atsuhiro Sato

Hiroaki Hazama

Masayuki Ichige

Hitoshi Ito

Takahito Nagamatsu

Akemi Satoh

Masao Toyosaki

Toshio Yamamura

Hideshi Miyajima

Akio Ui

Hidemitsu Egawa

Hiroshi Sato

Takashi O

Takamitsu Yoshida

Hiroyuki Toyama

Yoshiro Osawa

Isao Ouchi

Nobuteru Oda

Taketo Matsuda

Mitsuyoshi Yamazaki

A semiconductor substrate with a groove is placed in a plasma generating reaction chamber. Silicon, oxygen and hydrogen containing gases are introduced into the reaction chamber as process gases. A ratio of a gas flow of the hydrogen containing gas except the silicon containing gas to a total gas flow of the silicon containing gas and the oxygen containing gas defines a first gas-flow ratio. A ratio of a gas flow of the oxygen containing gas to that of the silicon containing gas defines a second gas-flow ratio. The first and second gas-flow ratios establish a linear function for a critical condition. A cluster formation condition is set up by relatively increasing the first gas-flow ratio while relatively decreasing the second gas-flow ratio with respect to the critical condition. A cluster suppression condition is also set up by relatively decreasing the first gas-flow ratio while relatively increasing the second gas-flow ratio with respect to the critical condition. The process gases are supplied to the reaction chamber under the cluster formation condition and under the cluster suppression condition, alternately, to form an insulating film buried in the groove.

Method of forming insulating film, method of manufacturing semiconductor device and their controlling computer program

Forming of a first silicon oxide film is started on an internal surface of a trench formed on a surface or upwardly of a semiconductor substrate according to an HDP technique. Then, deposition of the first silicon oxide film stops before an opening of the trench closes. Further, the first silicon oxide film deposited in the vicinity of an opening is etched, and a second silicon oxide film is formed on the first silicon oxide film deposited on the bottom of the trench according to the HDP technique. In this manner, the first and second silicon oxide films can be laminated on the bottom of the trench.

Manufacturing method of semiconductor device with filling insulating film into trench

There is here disclosed a film forming ring including a ring main body being made of an insulating material and formed in an annular shape along an edge of a substrate on which a film forming process by using a material gas in a plasma state is applied, and an inner rim of the ring main body being formed higher than its outside portion.

Film forming ring and method of manufacturing semiconductor device

A method for manufacturing a semiconductor device of the present invention includes, forming a first silicon oxide film by HDP-CVD so as to bury a recess portion in a three-dimensional portion formed in a surface region of a semiconductor workpiece to a position lower than an upper surface of the recess portion, and forming a second silicon oxide film by SOG on the first silicon oxide film so as to fill the recess portion.

Method for manufacturing semiconductor device

A semiconductor device comprises a semiconductor substrate, an interlayer insulating layer formed above the semiconductor substrate, a first metal interconnection embedded in the interlayer insulating layer with a surface thereof exposed to the same plane as a surface of the interlayer insulating layer, a diffusion preventive layer formed on at least the first metal interconnection to prevent diffusion of a metal included in the first metal interconnection, a nitrogen-doped silicon oxide layer formed on the diffusion preventive layer, a fluorine-doped silicon oxide layer formed on the nitrogen-doped silicon oxide layer, and a second metal interconnection embedded in the fluorine-doped silicon oxide layer with a surface thereof exposed to the same plane as a surface of the fluorine-doped silicon oxide layer, and electrically connected to the first metal interconnection.

Semiconductor device and manufacturing method thereof

In a method of manufacturing a semiconductor device including a semiconductor element formed on a semiconductor substrate, an SiOF film is formed at least on the top surfaces of metal wirings under condition that an in-chamber pressure is 5 mTorr or lower. The SiOF film can thus be buried into a space between the metal wirings without causing any void and the capacitance between the wirings can be prevented from increasing, while preventing the metal wirings from being damaged and preventing the aspect ratio from increasing.

Method of manufacturing a semiconductor device

Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below:

Semiconductor device

A plasma CVD device having a chamber, an upper electrode provided in the chamber, an under electrode provided in the chamber to be opposite to the upper electrode and to mount a sample thereon, and a plurality of power sources having a different frequency connected to the upper electrode. Gas is introduced into the chamber of the plasma CVD device, the gas contains at least an organic silicon compound, CF.sub.4 and O.sub.2, and has an element ratio (F/Si) of silicon (Si), constituting the organic silicon compound, to fluorine (F), constituting CF.sub.4, to be set to 15 or more. Si(OC.sub.2 H.sub.5).sub.4 or Si(OCH.sub.3).sub.4 is used as an organic silicon compound.

Method for forming silicon oxide on a semiconductor

Method of manufacturing silicon oxide film containing fluorine

A crude olefin oxide containing high-boiling ingredients is distilled at a pH of 4 to 7 in the presence of a nonvolatile neutral or weakly basic alkali metal or alkaline earth metal salt or hydroxide to separate the olefin oxide from the high-boiling ingredients. This permits the prevention of the polymerization of the olefin oxide and its conversion to the corresponding glycol.

Process for purifying crude olefin oxides

Growing community of inventors

Yokohama, Japan

Yukio Nishiyama