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For the Inventor, By the Inventor

Tokyo, Japan

Hiroaki Hazama

USPTO Granted Patents = 49

Average Co-Inventor Count = 2.8

ph-index = 13

Forward Citations = 538(Granted Patents)


Location History:

  • Kanagawa, JP (1992 - 1998)
  • Yokohama, JP (1996 - 2000)
  • Hachioji, JP (2003 - 2008)
  • Mie, JP (2007 - 2012)
  • Yokkaichi, JP (2006 - 2013)
  • Tokyo, JP (2001 - 2014)

Company Filing History:

goldMedal49 out of 52,711 
 
Kabushiki Kaisha Toshiba
 patents

Years Active: 1992-2014

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49 patents (USPTO):
1. 8879326 - Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell (2014-11-04),
2. 8837225 - Nonvolatile semiconductor memory device and operation method of the same (2014-09-16),
3. 8482984 - Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell (2013-07-09),
4. 8363480 - Nonvolatile semiconductor storage device (2013-01-29),
5. 8274834 - Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell (2012-09-25),
6. 8222106 - Nonvolatile semiconductor memory device, method of fabricating the nonvolatile semiconductor memory device and process of writing data on the nonvolatile semiconductor memory device (2012-07-17),
7. 8130555 - Nonvolatile semiconductor storage device and method of erase verifying the same (2012-03-06),
8. 8098509 - Nonvolatile semiconductor memory device, method of fabricating the nonvolatile semiconductor memory device and process of writing data on the nonvolatile semiconductor memory device (2012-01-17),
9. 7898867 - Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell (2011-03-01),
10. 7795667 - Semiconductor memory preventing an electric short circuit between a word line and a semiconductor substrate, and manufacturing method for the semiconductor memory (2010-09-14),
11. 7786524 - Semiconductor device and method of manufacturing the same (2010-08-31),
12. 7692969 - Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell (2010-04-06),
13. 7371654 - Manufacturing method of semiconductor device with filling insulating film into trench (2008-05-13),
14. 7364951 - Nonvolatile semiconductor memory device and method for manufacturing the same (2008-04-29),
15. 7361951 - Flash memory having memory section and peripheral circuit section (2008-04-22),

Title: Innovations in Nonvolatile Semiconductor Memory by Hiroaki Hazama

Introduction

Hiroaki Hazama is a prominent inventor based in Tokyo, Japan, known for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 49 patents, Hazama has played an instrumental role in advancing nonvolatile memory devices, which are essential for data storage in various electronic applications.

Latest Patents

Among his latest patents are innovative designs for nonvolatile semiconductor memory devices. One of his patents details a nonvolatile semiconductor memory device that includes multiple memory cells along with a dummy cell connected to the end of a memory cell. This dummy cell is strategically positioned adjacent to the select gate transistor and is utilized during data erasing, receiving the same bias voltage as other memory cells.

Another recent patent describes a nonvolatile semiconductor memory device consisting of a semiconductor substrate and memory transistors. This design features a unique laminate structure formed by alternating insulating and conductive films, alongside a silicon pillar that plays a key role in the data deletion process. During data deletion, a voltage is applied in such a way that the potential of the silicon pillar decreases as its cross-sectional area diminishes, ensuring efficient memory operation.

Career Highlights

Hiroaki Hazama is affiliated with Kabushiki Kaisha Toshiba, where he has contributed to the company's reputation as a leader in semiconductor innovation. His technical expertise has led to groundbreaking advancements in memory technology, enabling Toshiba to stay at the forefront of the industry.

Collaborations

Throughout his career, Hazama has collaborated with notable colleagues such as Akira Goda and Hirohisa Iizuka. These partnerships have fostered an environment of innovation, allowing them to explore new possibilities in semiconductor technology and contribute collectively to the field.

Conclusion

Hiroaki Hazama's inventive spirit and dedication to advancing nonvolatile memory technology continue to shape the future of data storage solutions. His extensive patent portfolio reflects a deep commitment to innovation, making him a key figure in the semiconductor industry. As technology evolves, Hazama's work will undoubtedly influence the development of next-generation memory devices.

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