The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2008
Filed:
Oct. 27, 2005
Riichiro Shirota, Fujisawa, JP;
Kikuko Sugimae, Yokohama, JP;
Masayuki Ichige, Yokohama, JP;
Atsuhiro Sato, Zushi, JP;
Hiroaki Hazama, Hachioji, JP;
Riichiro Shirota, Fujisawa, JP;
Kikuko Sugimae, Yokohama, JP;
Masayuki Ichige, Yokohama, JP;
Atsuhiro Sato, Zushi, JP;
Hiroaki Hazama, Hachioji, JP;
Kabushiki Kaisha Toshiba, Kawasaki-shi, JP;
Abstract
A semiconductor memory device includes a semiconductor substrate, an element isolation region formed in the semiconductor substrate and including a thick element isolating insulation film, for isolating an element region, a first gate electrode provided on the element region in the semiconductor substrate in self-alignment with the element isolation region, a second gate electrode provided on the first gate electrode with an insulation film interposed therebetween, and a resistance element formed on the element isolation region, the resistance element and the second gate electrode being formed of the same conductive film.