Inventors with similar research interests:
Location History:
- Rosharon, TX (US) (1989 - 1995)
- Saratoga, CA (US) (1994 - 1997)
- Arcola, TX (US) (1991 - 1998)
Company Filing History:
Years Active: 1989-1998
Areas of Expertise:
Title: Manzur Gill: Innovating the Future of Memory Cell Arrays
Introduction:
Manzur Gill, based in Rosharon, Texas, is a prolific inventor and a leading figure in the field of memory cell arrays. With an impressive portfolio of 64 patents, Gill's groundbreaking work has revolutionized the design and functionality of EPROM and flash EEPROM memory cells. His contributions have paved the way for advancements in memory technology, enabling increased storage capacity and improved performance. Let us delve into Gill's latest patents, career highlights, collaborations, and his invaluable contributions to the industry.
Latest Patents:
Gill's recent patents showcase his expertise in memory cell array design. One notable invention is the "Memory Cell Array with LOCOS Free Isolation." This patent describes an EPROM or flash EEPROM memory array consisting of stacked-gate, single-transistor memory cells. The array incorporates thick field oxide strips to isolate the columns, with cross-running word lines and source lines. The unique structure of each stacked gate, comprising a control gate and floating gate, enhances capacitance between the two, resulting in improved performance and reliability.
Another recent patent by Gill is the "Method for Forming Field Oxide Regions." This invention relates to a method for producing rectangularly shaped field oxide regions in Flash EEPROM memory arrays. By selectively etching a field oxide layer grown on a substrate, Gill's method efficiently creates the desired field oxide regions. This innovative technique contributes to the overall manufacturing process of Flash EEPROM memory arrays.
Career Highlights:
Throughout his career, Gill has made significant contributions to renowned companies in the semiconductor industry. He has worked at Texas Instruments Corporation, a leading global semiconductor manufacturer known for its groundbreaking innovations. Gill's expertise has also been influential at National Semiconductor Corporation, another prominent player in the field. His work within these esteemed organizations has helped shape the future of memory technology and solidify his reputation as an industry expert.
Collaborations:
Manzur Gill's pursuit of innovation and excellence has often led him to collaborate with fellow experts in the field. Notably, Gill has had the opportunity to work alongside Sung-Wei Lin and David J McElroy. These collaborative efforts have fostered an environment of knowledge sharing, driving advancements in memory cell arrays and supporting technological progress.
Conclusion:
Manzur Gill's extensive patent portfolio and contributions to the memory cell array field have positioned him as a true innovator. His expertise and groundbreaking inventions have pushed the boundaries of technology, enhancing the performance and reliability of EPROM and flash EEPROM memory cells. Through collaborations with industry-leading companies and renowned colleagues, Gill has played a pivotal role in shaping the landscape of memory technology. His continued efforts ensure a promising future where memory capacities and performance keep evolving.