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For the Inventor, By the Inventor

Munich, Germany

Scott G Balster

USPTO Granted Patents = 21

Average Co-Inventor Count = 4.7

ph-index = 10

Forward Citations = 675(Granted Patents)


Company Filing History:

goldMedal21 out of 29,232 
 
Texas Instruments Corporation
 patents

Years Active: 2002-2012

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21 patents (USPTO):
1. 8247300 - Control of dopant diffusion from buried layers in bipolar integrated circuits (2012-08-21),
2. 7883977 - Advanced CMOS using super steep retrograde wells (2011-02-08),
3. 7736986 - Integrated stacked capacitor and method of fabricating same (2010-06-15),
4. 7422972 - On chip heating for electrical trimming of polysilicon and polysilicon-silicon-germanium resistors and electrically programmable fuses for integrated circuits (2008-09-09),
5. 7227241 - Integrated stacked capacitor and method of fabricating same (2007-06-05),
6. 7217322 - Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer (2007-05-15),
7. 7199430 - Advanced CMOS using super steep retrograde wells (2007-04-03),
8. 7192838 - Method of producing complementary SiGe bipolar transistors (2007-03-20),
9. 7164186 - Structure of semiconductor device with sinker contact region (2007-01-16),
10. 7144789 - Method of fabricating complementary bipolar transistors with SiGe base regions (2006-12-05),
11. 7130182 - Stacked capacitor and method for fabricating same (2006-10-31),
12. 7118981 - Method of fabricating an integrated silicon-germanium heterobipolar transistor and an integrated silicon-germanium heterobipolar transistor (2006-10-10),
13. 7064399 - Advanced CMOS using super steep retrograde wells (2006-06-20),
14. 6958523 - On chip heating for electrical trimming of polysilicon and polysilicon-silicon-germanium resistors and electrically programmable fuses for integrated circuits (2005-10-25),
15. 6838348 - Integrated process for high voltage and high performance silicon-on-insulator bipolar devices (2005-01-04),

Title: Scott G. Balster: Innovator in Integrated Circuit Technologies

Introduction

Scott G. Balster, a prominent inventor based in Munich, Germany, has made significant contributions to the field of integrated circuit technologies. With an impressive portfolio of 21 patents, Balster's innovations have advanced the capabilities and efficiencies of modern electronic devices.

Latest Patents

Among his latest patents, Balster has developed a method for controlling dopant diffusion from buried layers in bipolar integrated circuits. This invention focuses on integrated circuits that include vertical bipolar transistors, each featuring a buried collector region. A carbon-bearing diffusion barrier is implemented over the buried collector region, effectively inhibiting the diffusion of dopants into the overlying epitaxial layer. Moreover, Balster's method may utilize the incorporation of a carbon source during the epitaxial formation or through ion implantation techniques. His other notable work includes the advanced CMOS using super steep retrograde wells, where he introduces a method to form steep doping profiles in MOS transistor structures by employing a carbon-containing layer beneath the gate dielectric and source and drain regions.

Career Highlights

Scott G. Balster's career at Texas Instruments Corporation has been characterized by groundbreaking advancements in semiconductor technology. His relentless pursuit of innovation and excellence has positioned him as a key contributor in the development of next-generation electronic components.

Collaborations

Balster has collaborated with esteemed colleagues, including Jeffrey A. Babcock and Angelo Pinto. Together, they have worked on projects that push the boundaries of technology and have yielded numerous patents that benefit the industry as a whole.

Conclusion

Scott G. Balster’s impactful inventions and patents highlight his dedication to enhancing integrated circuit technology. His work continues to inspire future developments in the field, contributing to the evolution of electronics for decades to come.

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