The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2007
Filed:
Sep. 02, 2004
Jeffrey A. Babcock, Sunnyvale, CA (US);
Scott Balster, Munich, DE;
Alfred Haeusler, Freising, DE;
Angelo Pinto, Allen, TX (US);
Manfred Schiekofer, Freising, DE;
Philipp Steinmann, Unterschleissheim, DE;
Badih El-kareh, Freising, DE;
Jeffrey A. Babcock, Sunnyvale, CA (US);
Scott Balster, Munich, DE;
Alfred Haeusler, Freising, DE;
Angelo Pinto, Allen, TX (US);
Manfred Schiekofer, Freising, DE;
Philipp Steinmann, Unterschleissheim, DE;
Badih El-Kareh, Freising, DE;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method of fabricating an epitaxial silicon-germanium layer for an integrated semiconductor device comprises the step of depositing an arsenic in-situ doped silicon-germanium layer, wherein arsenic and germanium are introduced subsequently into different regions of said silicon-germanium layer during deposition of said silicon-germanium layer. By separating arsenic from germanium any interaction between arsenic and germanium is avoided during deposition thereby allowing fabricating silicon-germanium layers with reproducible doping profiles.