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Sunnyvale, CA, United States of America

Jeffrey A Babcock

USPTO Granted Patents = 49

Average Co-Inventor Count = 2.8

ph-index = 13

Forward Citations = 1,118(Granted Patents)

Location History:

Dallas, TX (US) (2002)
Neufahm, DE (2005)
Neufahrn, DE (2002 - 2011)
Richardson, TX (US) (2004 - 2014)
Santa Clara, CA (US) (2012 - 2017)
Sunnyvale, CA (US) (2007 - 2021)

Company Filing History:

41 out of 29,263

Texas Instruments Corporation

National Semiconductor Corporation

Years Active: 2002-2025

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Areas of Expertise:

Semiconductor Devices

Integrated Circuits

Bipolar Transistors

Non-Volatile Memory

CMOS Technology

Schottky Diodes

Heterojunction Bipolar Transistors

Gas Detectors

Epitaxial Silicon-Germanium

RF Voltage Controlled Capacitors

Programmable Neuron MOSFET

High Voltage Applications

49 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12389642 - Semiconductor devices for high frequency applications (2025-08-12),

2. 11024649 - Integrated circuit with resurf region biasing under buried insulator layers (2021-06-01),

3. 10636815 - Integrated circuit with resurf region biasing under buried insulator layers (2020-04-28),

4. 10504921 - Integrated circuit with resurf region biasing under buried insulator layers (2019-12-10),

5. 10269895 - Method for creating the high voltage complementary BJT with lateral collector on bulk substrate with resurf effect (2019-04-23),

6. 9741790 - Method for creating the high voltage complementary BJT with lateral collector on bulk substrate with resurf effect (2017-08-22),

7. 9640611 - HV complementary bipolar transistors with lateral collectors on SOI with resurf regions under buried oxide (2017-05-02),

8. 9633995 - Method of forming a gate shield in an ED-CMOS transistor and a base of a bipolar transistor using BICMOS technologies (2017-04-25),

9. 9633994 - BICMOS device having commonly defined gate shield in an ED-CMOS transistor and base in a bipolar transistor (2017-04-25),

10. 9343459 - Method for creating the high voltage complementary BJT with lateral collector on bulk substrate with resurf effect (2016-05-17),

11. 9306013 - Method of forming a gate shield in an ED-CMOS transistor and a base of a bipolar transistor using BICMOS technologies (2016-04-05),

12. 8728920 - Schottky diode with control gate for optimization of the on state resistance, the reverse leakage, and the reverse breakdown (2014-05-20),

13. 8703568 - Advanced CMOS using super steep retrograde wells (2014-04-22),

14. 8669157 - Non-volatile memory cell having a heating element and a substrate-based control gate (2014-03-11),

15. 8648391 - SiGe heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency product (2014-02-11),

Title: The Innovative Journey of Jeffrey A Babcock

Introduction: Jeffrey A Babcock is a renowned inventor based in Sunnyvale, California. His passion for innovation and problem-solving has led to numerous groundbreaking inventions in various fields.

Latest Patents: Jeffrey A Babcock holds several patents in the areas of technology, healthcare, and consumer electronics. His latest patents focus on improving efficiency in data processing and enhancing user experience in mobile applications.

Career Highlights: With a career spanning over two decades, Jeffrey A Babcock has worked for leading tech companies, contributing to the development of cutting-edge technologies. His expertise lies in software development, artificial intelligence, and machine learning.

Collaborations: Throughout his career, Jeffrey A Babcock has collaborated with top researchers, engineers, and designers to bring his inventions to life. His collaborative spirit and innovative mindset have resulted in successful projects that have made a significant impact in the industry.

Conclusion: Jeffrey A Babcock's dedication to innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventors. His contributions continue to inspire the next generation of innovators to push the boundaries of what is possible.

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