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Jeffrey A Babcock

This inventor holds 49 USPTO granted patents, primarily in Semiconductor Technology. Top assignees: Texas Instruments Corporation, National Semiconductor Corporation. Active years: 2002-2025.

USPTO Granted Patents = 49

% Patents Active = 91.8

Average Co-Inventor Count = 2.8

ph-index = 13

Forward Citations = 1,120(Granted Patents)

Location History:

Dallas, TX (US) (2002)
Neufahm, DE (2005)
Neufahrn, DE (2002 - 2011)
Richardson, TX (US) (2004 - 2014)
Santa Clara, CA (US) (2012 - 2017)
Sunnyvale, CA (US) (2007 - 2021)

Company Filing History:

41 out of 29,869

Texas Instruments Corporation

patents

8 out of 4,791

National Semiconductor Corporation

patents

Years Active: 2002-2025

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Areas of Expertise:

High Frequency Devices

Bipolar Transistors

Advanced CMOS

Non-Volatile Memory

Integrated Circuits

Schottky Diodes

Gas Detectors

Epitaxial Layers

Silicon-On-Insulator

Heterojunctions

Control Gates

Capacitor Integration

49 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12389642 - Semiconductor devices for high frequency applications (2025-08-12),

2. 11024649 - Integrated circuit with resurf region biasing under buried insulator layers (2021-06-01),

3. 10636815 - Integrated circuit with resurf region biasing under buried insulator layers (2020-04-28),

4. 10504921 - Integrated circuit with resurf region biasing under buried insulator layers (2019-12-10),

5. 10269895 - Method for creating the high voltage complementary BJT with lateral collector on bulk substrate with resurf effect (2019-04-23),

6. 9741790 - Method for creating the high voltage complementary BJT with lateral collector on bulk substrate with resurf effect (2017-08-22),

7. 9640611 - HV complementary bipolar transistors with lateral collectors on SOI with resurf regions under buried oxide (2017-05-02),

8. 9633995 - Method of forming a gate shield in an ED-CMOS transistor and a base of a bipolar transistor using BICMOS technologies (2017-04-25),

9. 9633994 - BICMOS device having commonly defined gate shield in an ED-CMOS transistor and base in a bipolar transistor (2017-04-25),

10. 9343459 - Method for creating the high voltage complementary BJT with lateral collector on bulk substrate with resurf effect (2016-05-17),

11. 9306013 - Method of forming a gate shield in an ED-CMOS transistor and a base of a bipolar transistor using BICMOS technologies (2016-04-05),

12. 8728920 - Schottky diode with control gate for optimization of the on state resistance, the reverse leakage, and the reverse breakdown (2014-05-20),

13. 8703568 - Advanced CMOS using super steep retrograde wells (2014-04-22),

14. 8669157 - Non-volatile memory cell having a heating element and a substrate-based control gate (2014-03-11),

15. 8648391 - SiGe heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency product (2014-02-11),

Title: The Innovative Journey of Jeffrey A Babcock

Introduction: Jeffrey A Babcock is a renowned inventor based in Sunnyvale, California. His passion for innovation and problem-solving has led to numerous groundbreaking inventions in various fields.

Latest Patents: Jeffrey A Babcock holds several patents in the areas of technology, healthcare, and consumer electronics. His latest patents focus on improving efficiency in data processing and enhancing user experience in mobile applications.

Career Highlights: With a career spanning over two decades, Jeffrey A Babcock has worked for leading tech companies, contributing to the development of cutting-edge technologies. His expertise lies in software development, artificial intelligence, and machine learning.

Collaborations: Throughout his career, Jeffrey A Babcock has collaborated with top researchers, engineers, and designers to bring his inventions to life. His collaborative spirit and innovative mindset have resulted in successful projects that have made a significant impact in the industry.

Conclusion: Jeffrey A Babcock's dedication to innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventors. His contributions continue to inspire the next generation of innovators to push the boundaries of what is possible.

Profile summary based on public USPTO records.

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