The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Apr. 29, 2022
Texas Instruments Incorporated, Dallas, TX (US);
Mattias Dahlstrom, Los Altos, CA (US);
Joseph De Santis, Gilroy, CA (US);
Jeffrey A. Babcock, Sunnyvale, CA (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
Semiconductor devices for high frequency operations are described. The semiconductor devices include a substrate with an epitaxial layer. The epitaxial layer has higher resistivity than the substrate and includes a surface facing away from the substrate. The epitaxial layer includes a shallow trench isolation (STI) structure extended to a first depth from the surface, which is surrounded by a well structure. Underneath the STI structure, the epitaxial layer includes a lightly doped portion exclusive of dopant atoms of the well structure. Moreover, the STI structure includes an inner portion surrounded by a deep trench isolation structure extended to a second depth from the surface, the second depth being greater than the first depth. An integrated circuit component is located above the inner portion of the STI structure.