The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2014
Filed:
Mar. 23, 2012
Applicants:
Jeffrey A. Babcock, Sunnyvale, CA (US);
Alexei Sadovnikov, Sunnyvale, CA (US);
Inventors:
Jeffrey A. Babcock, Sunnyvale, CA (US);
Alexei Sadovnikov, Sunnyvale, CA (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
The product of the breakdown voltage (BV) and the cutoff frequency (fT) of a SiGe heterojunction bipolar transistor (HBT) is increased beyond the Johnson limit by utilizing a doped region with a hollow core that extends down from the base to the heavily-doped buried collector region. The doped region and the buried collector region have opposite dopant types.
Quick Actions:
Babcock, Jeffrey. (2014). Sige heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency product (U.S. Patent No. 8648391). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8648391
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile