The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
Jan. 26, 2012
Jeffrey A. Babcock, Richardson, TX (US);
Angelo Pinto, Allen, TX (US);
Scott Balster, Dallas, TX (US);
Alfred Haeusler, Freising, DE;
Gregory E. Howard, Dallas, TX (US);
Jeffrey A. Babcock, Richardson, TX (US);
Angelo Pinto, Allen, TX (US);
Scott Balster, Dallas, TX (US);
Alfred Haeusler, Freising, DE;
Gregory E. Howard, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer () beneath the gate dielectric () and source and drain regions () of a MOS transistor. The carbon containing layer () will prevent the diffusion of dopants into the region () directly beneath the gate dielectric layer ().