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For the Inventor, By the Inventor

Freising, Germany

Alfred Haeusler

USPTO Granted Patents = 14 

Average Co-Inventor Count = 2.6

ph-index = 6

Forward Citations = 753(Granted Patents)


Company Filing History:

goldMedal10 out of 29,232 
 
Texas Instruments Corporation
 patents
silverMedal4 out of 371 
 
Texas Instruments Incorporated Deutschland, Gmbh
 patents

Years Active: 2004-2014

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14 patents (USPTO):
1. 8703568 - Advanced CMOS using super steep retrograde wells (2014-04-22),
2. 8648432 - Fully embedded micromechanical device, system on chip and method for manufacturing the same (2014-02-11),
3. 8470679 - Semiconductor device including a deep contact and a method of manufacturing such a device (2013-06-25),
4. 8129246 - Advanced CMOS using super steep retrograde wells (2012-03-06),
5. 8093115 - Tuning of SOI substrate doping (2012-01-10),
6. 7888225 - Method of manufacturing an electronic device including a PNP bipolar transistor (2011-02-15),
7. 7883977 - Advanced CMOS using super steep retrograde wells (2011-02-08),
8. 7655523 - Advanced CMOS using super steep retrograde wells (2010-02-02),
9. 7501324 - Advanced CMOS using super steep retrograde wells (2009-03-10),
10. 7217322 - Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer (2007-05-15),
11. 7199430 - Advanced CMOS using super steep retrograde wells (2007-04-03),
12. 7118981 - Method of fabricating an integrated silicon-germanium heterobipolar transistor and an integrated silicon-germanium heterobipolar transistor (2006-10-10),
13. 7064399 - Advanced CMOS using super steep retrograde wells (2006-06-20),
14. 6774455 - Semiconductor device with a collector contact in a depressed well-region (2004-08-10),

Title: Alfred Haeusler: Innovator in Semiconductor Technology

Introduction

Alfred Haeusler is a prominent inventor based in Freising, Germany, known for his significant contributions to semiconductor technology. With a total of 14 patents to his name, Haeusler has made remarkable advancements in the field of microelectronics.

Latest Patents

Haeusler's latest patents include "Advanced CMOS using super steep retrograde wells," which presents a method for forming super steep doping profiles in MOS transistor structures. This innovative method involves the formation of a carbon-containing layer beneath the gate dielectric and source and drain regions of a MOS transistor, effectively preventing the diffusion of dopants into critical areas. Another notable patent is for a "Fully embedded micromechanical device, system on chip and method for manufacturing the same." This invention details a fully embedded micromechanical device manufactured on an SOI substrate, featuring a moveable component with unique structural characteristics that enhance its functionality.

Career Highlights

Throughout his career, Haeusler has worked with renowned companies such as Texas Instruments Corporation and Texas Instruments Incorporated Deutschland, GmbH. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Haeusler has collaborated with notable professionals in the field, including Jeffrey A. Babcock and Angelo Pinto. These collaborations have contributed to the advancement of his inventions and the overall progress in semiconductor research.

Conclusion

Alfred Haeusler's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in microelectronics and related fields.

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