The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2006
Filed:
Apr. 15, 2004
Applicants:
Alfred Haeusler, Freising, DE;
Philipp Steinmann, Richardson, TX (US);
Scott Balster, Munich, DE;
Badih El-kareh, Wang, DE;
Inventors:
Alfred Haeusler, Freising, DE;
Philipp Steinmann, Richardson, TX (US);
Scott Balster, Munich, DE;
Badih El-Kareh, Wang, DE;
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 21/8222 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a method of fabricating an integrated silicon-germanium heterobipolar transistor a silicon dioxide layer arranged between a silicon-germanium base layer and a silicon emitter layer is formed by means of Rapid Thermal Processing (RTP) to ensure enhanced component properties of the integrated silicon-germanium heterobipolar transistor.