The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Sep. 21, 2010
Applicants:
Wolfgang Schwartz, Au, DE;
Alfred Haeusler, Freising, DE;
Vladimir Frank Drobny, Tucson, AZ (US);
Inventors:
Assignee:
Texas Instruments Deutschland GmbH, Freising, DE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/338 (2006.01); H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device, the method comprising: taking an SOI substrate comprising a bulk substrate, a buried insulating layer and an active layer, and implanting the bulk substrate from the side of and through the insulating layer and the active layer so as to generate an area having an increased doping concentration in the bulk substrate at the interface between the bulk substrate and the insulating layer.