The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Feb. 23, 2016
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Jeffrey A. Babcock, Sunnyvale, CA (US);
Alexei Sadovnikov, Sunnyvale, CA (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8249 (2006.01); H01L 27/06 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 21/3213 (2006.01); H01L 29/06 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0623 (2013.01); H01L 21/32139 (2013.01); H01L 21/8249 (2013.01); H01L 29/0649 (2013.01); H01L 29/402 (2013.01); H01L 29/423 (2013.01); H01L 29/456 (2013.01); H01L 29/4916 (2013.01); H01L 29/66553 (2013.01); H01L 29/66575 (2013.01); H01L 29/66681 (2013.01); H01L 29/66689 (2013.01); H01L 29/66712 (2013.01); H01L 29/78 (2013.01); H01L 29/7816 (2013.01); H01L 29/7824 (2013.01); H01L 29/7835 (2013.01); H01L 29/0653 (2013.01);
Abstract
A method of fabricating a MOSFET transistor in a SiGe BICMOS technology and resulting structure having a drain-gate feedback capacitance shield formed between a gate electrode and the drain region. The shield does not overlap the gate and thereby minimizes effect on the input capacitance of the transistor. The process does not require complex or costly processing since the shield is composed of bipolar base material commonly used in SiGe BICMOS technologies.