Company Filing History:

8 out of 29,232

Texas Instruments Corporation

patents

1 out of 371

Texas Instruments Incorporated Deutschland, Gmbh

patents

Years Active: 2006-2015

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9 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 9090991 - Controlling an epitaxial growth process in an epitaxial reactor (2015-07-28),

2. 8940093 - Method of controlling an epitaxial growth process in an epitaxial reactor (2015-01-27),

3. 8932942 - Method of forming an electrical contact between a support wafer and the surface of a top silicon layer of a silicon-on-insulator wafer and an electrical device including such an electrical contact (2015-01-13),

4. 8330223 - Bipolar transistor (2012-12-11),

5. 8294218 - Method of fabricating an integrated circuit with gate self-protection, and an integrated circuit with gate self-protection (2012-10-23),

6. 8247300 - Control of dopant diffusion from buried layers in bipolar integrated circuits (2012-08-21),

7. 7772057 - Method of fabricating an integrated circuit with gate self-protection, and an integrated circuit with gate self-protection (2010-08-10),

8. 7217322 - Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer (2007-05-15),

9. 7144789 - Method of fabricating complementary bipolar transistors with SiGe base regions (2006-12-05),

Title: Manfred Schiekofer: Innovator in Epitaxial Growth Processes

Introduction

Manfred Schiekofer is a notable inventor based in Freising, Germany. He has made significant contributions to the field of epitaxial growth processes, holding a total of nine patents. His work has advanced the understanding and control of these complex processes, which are crucial in semiconductor manufacturing.

Latest Patents

Among his latest patents, Schiekofer has developed a system for controlling an epitaxial growth process in an epitaxial reactor. This innovative system includes a processor that sets up a modeled output parameter value as a linear function of the actual output parameter value, along with a second set of thermocouple offset parameter values. Additionally, he has patented a method of controlling an epitaxial growth process, which involves optimizing the thermocouple offset parameter for subsequent runs by establishing a modeled output parameter value as a linear function of the actual output parameter value and a second thermocouple offset parameter value.

Career Highlights

Throughout his career, Schiekofer has worked with prominent companies such as Texas Instruments Corporation and Texas Instruments Incorporated Deutschland, GmbH. His experience in these organizations has allowed him to refine his expertise in semiconductor technologies and epitaxial processes.

Collaborations

Some of his notable coworkers include Badih El-Kareh and Scott G Balster. Their collaborative efforts have contributed to advancements in the field and have fostered innovation in semiconductor manufacturing.

Conclusion

Manfred Schiekofer's contributions to the field of epitaxial growth processes through his patents and collaborations highlight his role as a significant inventor. His work continues to influence the semiconductor industry and drive technological advancements.

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