The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2006
Filed:
Apr. 08, 2004
Badih El-kareh, Wang, DE;
Scott Balster, Munich, DE;
Philipp Steinmann, Richardson, TX (US);
Thomas Scharnagl, Tiefenbach, DE;
Manfred Schiekofer, Freising, DE;
Carl Willis, Freising, DE;
Badih El-Kareh, Wang, DE;
Scott Balster, Munich, DE;
Philipp Steinmann, Richardson, TX (US);
Thomas Scharnagl, Tiefenbach, DE;
Manfred Schiekofer, Freising, DE;
Carl Willis, Freising, DE;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
In a method of fabricating complementary bipolar transistors with SiGe base regions the base regions of the NPN and PNP transistors are formed one after the other over two collector regionsby epitaxial deposition of crystalline silicon-germanium layers. With this method the germanium profile of the SiGe layers can be freely selected for both NPN and PNP transistors in thus enabling complementary transistor performance to be optimized individually. The SiGe layerscan be doped with an n-type or p-type dopant during or after deposition of the silicon-germanium layers