The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Sep. 02, 2010
Applicants:
Klaus Schimpf, Freising, DE;
Manfred Schiekofer, Freising, DE;
Carl David Willis, Neusaess, DE;
Michael Waitschull, Hallertau, DE;
Wolfgang Ploss, Mauern, DE;
Inventors:
Klaus Schimpf, Freising, DE;
Manfred Schiekofer, Freising, DE;
Carl David Willis, Neusaess, DE;
Michael Waitschull, Hallertau, DE;
Wolfgang Ploss, Mauern, DE;
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
A bipolar transistor has a collector having a base layer provided thereon and a shallow trench isolation structure formed therein. A base poly layer is provided on the shallow trench isolation structure. The shallow trench isolation structure defines a step such that a surface of the collector projects from the shallow trench isolation structure adjacent the collector.