The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Jun. 08, 2010
Badih El-kareh, Cedar Park, TX (US);
Scott Gerard Balster, Dallas, TX (US);
Hiroshi Yasuda, Plano, TX (US);
Manfred Schiekofer, Freising, DE;
Badih El-Kareh, Cedar Park, TX (US);
Scott Gerard Balster, Dallas, TX (US);
Hiroshi Yasuda, Plano, TX (US);
Manfred Schiekofer, Freising, DE;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An integrated circuit with gate self-protection comprises a MOS device and a bipolar device, wherein the integrated circuit further comprises a semiconductor layer with electrically active regions in which and on which the MOS device and the bipolar device are formed and electrically inactive regions for isolating the electrically active regions from each other. The MOS device comprises a gate structure and a body contacting structure, wherein the body contacting structure is formed of a base layer deposited in a selected region over an electrically active region of the semiconductor layer, and the body contacting structure is electrically connected with the gate structure. The base layer forming the body contacting structure also forms the base of the bipolar device. The present invention further relates to a method for fabricating such an integrated circuit.