The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2007
Filed:
Sep. 10, 2004
Angelo Pinto, Allen, TX (US);
Jeffrey A. Babcock, Richardson, TX (US);
Michael Schober, Freising, DE;
Scott G. Balster, Munich, DE;
Christoph Dirnecker, Haag a.d. Amper, DE;
Angelo Pinto, Allen, TX (US);
Jeffrey A. Babcock, Richardson, TX (US);
Michael Schober, Freising, DE;
Scott G. Balster, Munich, DE;
Christoph Dirnecker, Haag a.d. Amper, DE;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method for manufacturing a semiconductor device includes forming a buried layer of a semiconductor substrate. An active region is formed adjacent at least a portion of the buried layer. A first isolation structure is formed adjacent at least a portion of the buried layer. A second isolation structure is formed adjacent at least a portion of the active region. A base layer is formed adjacent at least a portion of the active region. A dielectric layer is formed adjacent at least a portion of the base layer, and then at least part of the dielectric layer is removed at an emitter contact location and at a sinker contact location. An emitter structure is formed at the emitter contact location. Forming the emitter structure includes etching the semiconductor device at the sinker contact location to form a sinker contact region. The sinker contact region has a first depth. The method may also include forming a gate structure. Forming the gate structure includes etching the sinker contact region thereby increasing the first depth of the sinker contact region to a second depth.