The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2007
Filed:
Aug. 26, 2004
Philipp Steinmann, Unterschleissheim, DE;
Scott Balster, Munich, DE;
Badih El-kareh, Wang, DE;
Thomas Scharnagl, Tiefenbach, DE;
Philipp Steinmann, Unterschleissheim, DE;
Scott Balster, Munich, DE;
Badih El-Kareh, Wang, DE;
Thomas Scharnagl, Tiefenbach, DE;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Method of producing complementary SiGe bipolar transistors. In a method of producing complementary SiGe bipolar transistors, interface oxide layers () for NPN and PNP emitters (), are separately formed and emitter polysilicon () is separately patterned, allowing these layers to be optimized for the respective conductivity type.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile