The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Apr. 26, 2007
Christoph Dirnecker, Haag, DE;
Jeffrey Babcock, Sunnyvale, CA (US);
Scott Balster, Munich, DE;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An integrated stacked capacitor comprises a first capacitor film () of polycrystalline silicide, a second capacitor film () and a first dielectric () sandwiched between the first capacitor film () and second capacitor film (). A second dielectric () and a third capacitor film () are provided. The second dielectric () is sandwiched between the second capacitor film () and third capacitor film (). A method for fabrication of an integrated stacked capacitor comprises the following sequence of steps: applying a polysilicide layer () to form the first capacitor film (); applying a first dielectric (); applying a first metallization layer () to form the second capacitor film (); applying a second dielectric (); and applying a second metallization layer () to form the third capacitor film ().