IDiyas

For the Inventor, By the Inventor

Ledgewood, NJ, United States of America

Scott D Allen

USPTO Granted Patents = 9


Average Co-Inventor Count = 4.5

ph-index = 3

Forward Citations = 32(Granted Patents)


Location History:

  • Legewood, NJ (US) (2008)
  • Wappingers Falls, NY (US) (2006 - 2009)
  • Dumont, NJ (US) (2009)
  • Hopewell Junction, NY (US) (2010)
  • Ledgewood, NJ (US) (2008 - 2015)

Company Filing History:

goldMedal9 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 2006-2015

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9 patents (USPTO):
1. 9093387 - Metallic mask patterning process for minimizing collateral etch of an underlayer (2015-07-28),
2. 8039331 - Opto-thermal annealing methods for forming metal gate and fully silicided gate-field effect transistors (2011-10-18),
3. 7786017 - Utilizing inverse reactive ion etching lag in double patterning contact formation (2010-08-31),
4. 7560387 - Opening hard mask and SOI substrate in single process chamber (2009-07-14),
5. 7545041 - Techniques for patterning features in semiconductor devices (2009-06-09),
6. 7494919 - Method for post lithographic critical dimension shrinking using thermal reflow process (2009-02-24),
7. 7410852 - Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors (2008-08-12),
8. 7354867 - Etch process for improving yield of dielectric contacts on nickel silicides (2008-04-08),
9. 7030008 - Techniques for patterning features in semiconductor devices (2006-04-18),

Title: Scott D Allen: A Trailblazer in the World of Technological Innovation

Introduction:

Scott D Allen, a brilliant inventor hailing from Ledgewood, NJ, USA, is renowned for his unwavering passion for innovation and his remarkable commitment to pushing the boundaries of what is possible in the realm of technology.

Latest Patents:

With an impressive portfolio of 9 patents, Scott D Allen continues to revolutionize the field of technology. His latest patents include a Metallic Mask Patterning Process for Minimizing Collateral Etch of an Underlayer and Opto-Thermal Annealing Methods for Forming Metal Gate and Fully Silicided Gate-Field Effect Transistors.

Career Highlights:

Scott D Allen is a key figure at the International Business Machines Corporation (IBM), where he has played a pivotal role in developing cutting-edge technologies and solutions that have redefined the industry. His innovative contributions have paved the way for advancements in various fields of technology.

Collaborations:

In his journey towards innovation, Scott D Allen has collaborated with esteemed colleagues such as Richard Stephan Wise and Colin J Brodsky. Together, they have worked on pioneering projects that have set new standards in the industry and have inspired future generations of inventors.

Conclusion:

In conclusion, Scott D Allen's trailblazing spirit, coupled with his relentless drive for innovation, has solidified his position as a true pioneer in the world of technology. His groundbreaking work and unparalleled dedication serve as a testament to his unwavering commitment to shaping the future of technological advancements.

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