The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Jan. 25, 2006
Scott D. Allen, Dumont, NJ (US);
Kangguo Cheng, Beacon, NY (US);
Xi LI, Somers, NY (US);
Kevin R. Winstel, Poughkeepsie, NY (US);
Scott D. Allen, Dumont, NJ (US);
Kangguo Cheng, Beacon, NY (US);
Xi Li, Somers, NY (US);
Kevin R. Winstel, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods for opening a hard mask and a silicon-on-insulator substrate in a single process chamber are disclosed. In one embodiment, the method includes patterning a photoresist over a stack including an anti-reflective coating (ARC) layer, a silicon dioxide (SiO) based hard mask layer, a silicon nitride pad layer, a silicon dioxide (SiO) pad layer and the SOI substrate, wherein the SOI substrate includes a silicon-on-insulator layer and a buried silicon dioxide (SiO) layer; and in a single process chamber: opening the ARC layer; etching the silicon dioxide (SiO) based hard mask layer; etching the silicon nitride pad layer; etching the silicon dioxide (SiO) pad layer; and etching the SOI substrate. Etching all layers in a single chamber reduces the turn-around-time, lowers the process cost, facilitates process control and/or improve a trench profile.