The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9093387 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 28, 2015

Filed:

Jan. 08, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Scott D. Allen, Ledgewood, NJ (US);

Kuang-Jung Chen, Poughkeepsie, NY (US);

Huihang Dong, Danbury, CT (US);

Wai-Kin Li, Hopewell Junction, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/033 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31056 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/0276 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31111 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01);
Abstract

A stack of a dielectric material layer and a metallic material layer are formed on a substrate. A first organic planarization layer, a non-metallic hard mask layer, and a photoresist layer are sequentially deposited over the metallic material layer. The photoresist layer is lithographically patterned, and the pattern in the photoresist layer is transferred through the non-metallic hard mask layer, the first organic planarization layer, and the metallic material layer to form a cavity. A second organic planarization layer is deposited within the cavity and over remaining portions of the photoresist layer. The second organic planarization layer and the photoresist layer are recessed, and the non-metallic hard mask layer is subsequently removed. Remaining portions of the first and second organic planarization layers are simultaneously removed to provide physically exposed surfaces of the patterned metallic material layer and a top surface of the dielectric material layer.


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