The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2009

Filed:

Jan. 23, 2006
Applicants:

Scott D. Allen, Wappingers Falls, NY (US);

Katherina E. Babich, Chappaqua, NY (US);

Steven J. Holmes, Guilderland, NY (US);

Arpan P. Mahorowala, Bronxville, NY (US);

Dirk Pfeiffer, Dobbs Ferry, NY (US);

Richard Stephan Wise, New Windsor, NY (US);

Inventors:

Scott D. Allen, Wappingers Falls, NY (US);

Katherina E. Babich, Chappaqua, NY (US);

Steven J. Holmes, Guilderland, NY (US);

Arpan P. Mahorowala, Bronxville, NY (US);

Dirk Pfeiffer, Dobbs Ferry, NY (US);

Richard Stephan Wise, New Windsor, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

Techniques for semiconductor processing are provided. In one aspect, a method for patterning one or more features in a semiconductor device comprises the following step. At least one critical dimension of the one or more features is reduced during etching of the antireflective material. A lithographic structure is also provided.


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