Location History:
- Hillsboro, OR (US) (2011 - 2020)
- Portland, OR (US) (2019 - 2021)
Company Filing History:
Years Active: 2011-2021
Title: Satyarth Suri: Innovator in Spin Transfer Torque Memory Devices
Introduction
Satyarth Suri, based in Hillsboro, Oregon, is a noteworthy inventor with a remarkable portfolio of 28 patents. His work primarily focuses on advancements in memory devices, particularly in the field of spin transfer torque memory technology.
Latest Patents
Suri's latest innovations include two significant patents. The first, titled "Spin Transfer Torque Memory Devices Having Heusler Magnetic Tunnel Junctions," centers around the fabrication techniques for cutting-edge spin transfer torque memory devices. This invention emphasizes the use of Heusler alloys for the fixed and free magnetic layers, complemented by a lattice-matched tunnel barrier layer, potentially made of strontium titanate.
The second patent, "Self-Aligned Hard Masks with Converted Liners," introduces innovative methodologies for forming and lining trenches within dielectric surfaces. This patent outlines a process where metal fills the trenches, subsequently recessed, allowing the liner to transform into a dielectric before depositing a hard mask, showcasing Suri’s ingenuity in addressing complex semiconductor challenges.
Career Highlights
Satyarth Suri is a key contributor at Intel Corporation, where he plays a crucial role in pushing the boundaries of memory technology. His extensive research and patent portfolio illustrate his commitment to innovation and the advancement of semiconductor technologies.
Collaborations
Throughout his career, Suri has collaborated with several notable colleagues, including Brian S. Doyle and Kaan Oguz. These partnerships reflect his ability to work effectively within a team of skilled professionals, further enhancing the development of new technology solutions.
Conclusion
Satyarth Suri stands out as a passionate innovator in the field of memory technology. With a strong track record of patenting notable inventions, he continues to influence the landscape of spin transfer torque memory devices. His work not only exemplifies the spirit of innovation at Intel Corporation but also contributes significantly to the future of memory technologies.