The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2019
Filed:
Jun. 26, 2015
Intel Corporation, Santa Clara, CA (US);
Brian S. Doyle, Portland, OR (US);
Kaan Oguz, Beaverton, OR (US);
Kevin P. O'Brien, Portland, OR (US);
David L. Kencke, Beaverton, OR (US);
Elijah V. Karpov, Portland, OR (US);
Charles C. Kuo, Hillsboro, OR (US);
Mark L. Doczy, Portland, OR (US);
Satyarth Suri, Portland, OR (US);
Robert S. Chau, Beaverton, OR (US);
Niloy Mukherjee, Portland, OR (US);
Prashant Majhi, San Jose, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
An embodiment includes an apparatus comprising: first and second electrodes on a substrate; a perpendicular magnetic tunnel junction (pMTJ), between the first and second electrodes, comprising a dielectric layer between a fixed layer and a free layer; and an additional dielectric layer directly contacting first and second metal layers; wherein (a) the first metal layer includes an active metal and the second metal includes an inert metal, and (b) the second metal layer directly contacts the free layer. Other embodiments are described herein.