logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10340443 B1

PDFFull Text
Date of Patent:
Jul. 02, 2019

Filed:

Jun. 26, 2015

Perpendicular magnetic memory with filament conduction path

Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Brian S. Doyle, Portland, OR (US);

Kaan Oguz, Beaverton, OR (US);

Kevin P. O'Brien, Portland, OR (US);

David L. Kencke, Beaverton, OR (US);

Elijah V. Karpov, Portland, OR (US);

Charles C. Kuo, Hillsboro, OR (US);

Mark L. Doczy, Portland, OR (US);

Satyarth Suri, Portland, OR (US);

Robert S. Chau, Beaverton, OR (US);

Niloy Mukherjee, Portland, OR (US);

Prashant Majhi, San Jose, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:

Trop, Pruner & Hu, P.C.

Primary Examiner:

Yosef Gebreyesus

Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 45/00 (2006.01); H01L 27/22 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 27/228 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 45/08 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/145 (2013.01); H01L 45/146 (2013.01);
Abstract

An embodiment includes an apparatus comprising: first and second electrodes on a substrate; a perpendicular magnetic tunnel junction (pMTJ), between the first and second electrodes, comprising a dielectric layer between a fixed layer and a free layer; and an additional dielectric layer directly contacting first and second metal layers; wherein (a) the first metal layer includes an active metal and the second metal includes an inert metal, and (b) the second metal layer directly contacts the free layer. Other embodiments are described herein.

Find Patent Forward Citations

Doyle, Brian. (2019). Perpendicular magnetic memory with filament conduction path (U.S. Patent No. 10340443). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10340443

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…