The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Sep. 18, 2015
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Mark L. Doczy, Beaverton, CA (US);
Brian S. Doyle, Portland, OR (US);
Charles C. Kuo, Union City, CA (US);
Kaan Oguz, Beaverton, OR (US);
Kevin P. O'Brien, Portland, OR (US);
Satyarth Suri, Portland, OR (US);
Tejaswi K. Indukuri, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H01F 41/34 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); G11C 11/161 (2013.01); H01F 10/329 (2013.01); H01F 10/3254 (2013.01); H01F 10/3272 (2013.01); H01F 10/3286 (2013.01); H01F 41/34 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract
Technologies for manufacturing spin transfer torque memory (STTM) elements are disclosed. In some embodiments, the technologies include methods for removing a re-deposited layer and/or interrupting the electrical continuity of a re-deposited layer that may form on one or more sidewalls of an STTM element during its formation. Devices and systems including such STTM elements are also described.