The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
Sep. 26, 2014
Intel Corporation, Santa Clara, CA (US);
Kevin P. O'Brien, Portland, OR (US);
Brian S. Doyle, Portland, OR (US);
Kaan Oguz, Hillsboro, OR (US);
Robert S. Chau, Beaverton, OR (US);
Satyarth Suri, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A method including forming a device stack including a dielectric layer between a fixed magnetic layer and a free magnetic layer on a fully-crystalline sacrificial film or substrate including a crystal lattice similar to the crystal lattice of the dielectric material; and transferring the device stack from the sacrificial film to a device substrate. An apparatus including a device stack including a dielectric layer between a fixed magnetic layer and a free magnetic layer on a device substrate wherein the fixed magnetic layer and the free magnetic layer each have a crystalline lattice conforming to a crystalline lattice of the sacrificial film or substrate on which they were formed prior to transfer to the device substrate.