IDiyas

For the Inventor, By the Inventor

Hashima, Japan

Satoru Shimada

USPTO Granted Patents = 9

Average Co-Inventor Count = 3.2

ph-index = 4

Forward Citations = 30(Granted Patents)


Location History:

  • Gifu-ken, JP (2006)
  • Gifu, JP (2005 - 2012)
  • Hashima, JP (2008 - 2012)

Company Filing History:

goldMedal7 out of 8,776 
 
Sanyo Electric Co., Ltd.
 patents
silverMedal2 out of 3,590 
 
Semiconductor Components Industries, LLC
 patents
bronzeMedal1 out of 306 
 
Sanyo Semiconductor Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2005-2012

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9 patents (USPTO):Explore Patents
1. 8319281 - Semiconductor device with insulated gate formed within grooved portion formed therein (2012-11-27),
2. 8242557 - Trench gate type transistor (2012-08-14),
3. 8110463 - Method of fabricating semiconductor device (2012-02-07),
4. 8076720 - Trench gate type transistor (2011-12-13),
5. 7655974 - Semiconductor device (2010-02-02),
6. 7646062 - Semiconductor device comprising buried wiring layer (2010-01-12),
7. 7439578 - Semiconductor device (2008-10-21),
8. 7045434 - Semiconductor device and method for manufacturing the same (2006-05-16),
9. 6841451 - Method of fabricating semiconductor device having alignment mark (2005-01-11),
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