Satoru Shimada

Title: Satoru Shimada: Innovator in Semiconductor Technology

Introduction

Satoru Shimada is a prominent inventor based in Hashima, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His work focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents

One of his latest patents is a semiconductor device with an insulated gate formed within a grooved portion. This invention aims to simplify the fabrication process while maintaining the dielectric strength voltage of the insulating film. The device features a groove portion, an insulating film on its surface, a gate electrode, and a source impurity region. The design ensures that the upper ends of the gate electrode are positioned to optimize the formation of the source impurity region.

Another notable patent is for a trench gate type transistor. This invention reduces gate capacitance, prevents crystal defects, and enhances gate breakdown voltage. The design includes trenches in an N-type semiconductor layer, with a uniformly thick silicon oxide film at the bottom and a thinner film on the upper sidewalls. This configuration improves transistor characteristics and disperses the gate electric field effectively.

Career Highlights

Satoru Shimada has worked with several notable companies, including Sanyo Electric Co., Ltd. and Semiconductor Components Industries, LLC. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Throughout his career, Shimada has collaborated with talented individuals such as Yoshikazu Yamaoka and Kazunori Fujita. These partnerships have fostered a creative environment that has led to groundbreaking advancements in semiconductor devices.

Conclusion

Satoru Shimada's contributions to semiconductor technology through his innovative patents and collaborations highlight his role as a key figure in the industry. His work continues to influence the development of advanced semiconductor devices, ensuring improved performance and reliability.