The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2012
Filed:
Dec. 27, 2007
Yoshikazu Yamaoka, Ogaki, JP;
Satoru Shimada, Hashima, JP;
Kazunori Fujita, Gifu, JP;
Kazuhiro Sasada, Hashima, JP;
Yoshikazu Yamaoka, Ogaki, JP;
Satoru Shimada, Hashima, JP;
Kazunori Fujita, Gifu, JP;
Kazuhiro Sasada, Hashima, JP;
Sanyo Electric, Co., Ltd., Moriguchi-shi, JP;
Abstract
A semiconductor device capable of inhibiting a fabricating process from complication while inhibiting the dielectric strength voltage of a insulating film from reduction is obtained. This semiconductor device includes a groove portion, an insulating film formed on a surface of the groove portion, a gate electrode and a source impurity region, wherein upper ends of the gate electrode, which are portions in contact with the insulating film, are each located at a position identical with or deeper than the range of an impurity introduced from a surface of a semiconductor substrate with respect to the insulating film in order to form the source impurity region and above a lower surface of the source impurity region.